MOSFET 2N-CH 1200V 475A
| Part | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Max] | Operating Temperature [Min] | Input Capacitance (Ciss) (Max) @ Vds | Technology | Drain to Source Voltage (Vdss) | Drain to Source Voltage (Vdss) | Power - Max [Max] | Gate Charge (Qg) (Max) @ Vgs | Configuration | Vgs(th) (Max) @ Id | Package / Case | Mounting Type | Rds On (Max) @ Id, Vgs | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GE Aerospace GE12047BCA3 | 475 A | 150 °C | -55 °C | 29300 pF | Silicon Carbide (SiC) | 1200 V | 1.2 kV | 1250 W | 1248 nC | 2 N-Channel (Dual) | 4.5 V | Module | Chassis Mount | 4.4 mOhm | |
GE Aerospace GE12047CCA3 | 475 A | 150 °C | -55 °C | 29300 pF | Silicon Carbide (SiC) | 1200 V | 1.2 kV | 1250 W | 1248 nC | 2 N-Channel (Half Bridge) | 4.5 V | Module | Chassis Mount | 4.4 mOhm | Module |