GE12047CCA3

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GE Aerospace

SIC 2N-CH 1200V 475A MODULE

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GE Aerospace

SIC 2N-CH 1200V 475A MODULE

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	GE12047CCA3	GE12047 Series

Configuration	2 N-Channel (Half Bridge)	2 N-Channel (Dual), 2 N-Channel (Half Bridge)
Current - Continuous Drain (Id) @ 25°C	475 A	475 A
Drain to Source Voltage (Vdss)	1200 V	1200 V
Drain to Source Voltage (Vdss)	1.2 kV	1.2 kV
Gate Charge (Qg) (Max) @ Vgs	1248 nC	1248 nC
Input Capacitance (Ciss) (Max) @ Vds	29300 pF	29300 pF
Mounting Type	Chassis Mount	Chassis Mount
Operating Temperature [Max]	150 °C	150 °C
Operating Temperature [Min]	-55 °C	-55 °C
Package / Case	Module	Module
Power - Max [Max]	1250 W	1250 W
Rds On (Max) @ Id, Vgs	4.4 mOhm	4.4 mOhm
Supplier Device Package	Module	Module
Technology	Silicon Carbide (SiC)	Silicon Carbide (SiC)
Vgs(th) (Max) @ Id	4.5 V	4.5 V

MOSFET 2N-CH 1200V 475A

Part	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Max]	Operating Temperature [Min]	Input Capacitance (Ciss) (Max) @ Vds	Technology	Drain to Source Voltage (Vdss)	Drain to Source Voltage (Vdss)	Power - Max [Max]	Gate Charge (Qg) (Max) @ Vgs	Configuration	Vgs(th) (Max) @ Id	Package / Case	Mounting Type	Rds On (Max) @ Id, Vgs	Supplier Device Package
GE Aerospace GE12047BCA3	475 A	150 °C	-55 °C	29300 pF	Silicon Carbide (SiC)	1200 V	1.2 kV	1250 W	1248 nC	2 N-Channel (Dual)	4.5 V	Module	Chassis Mount	4.4 mOhm
GE Aerospace GE12047CCA3	475 A	150 °C	-55 °C	29300 pF	Silicon Carbide (SiC)	1200 V	1.2 kV	1250 W	1248 nC	2 N-Channel (Half Bridge)	4.5 V	Module	Chassis Mount	4.4 mOhm	Module

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 1200V (1.2kV) 475A 1250W Chassis Mount Module

Technical documentation and resources