TK155A65Z,S4X

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Toshiba Semiconductor and Storage

MOSFET N-CH 650V 18A TO220SIS

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Toshiba Semiconductor and Storage

MOSFET N-CH 650V 18A TO220SIS

Technical Specifications

Parameters and characteristics for this part

Specification	TK155A65Z,S4X

Current - Continuous Drain (Id) @ 25°C	18 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	29 nC
Input Capacitance (Ciss) (Max) @ Vds	1635 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	40 W
Supplier Device Package	TO-220SIS
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Technology	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Vgs (Max)	Package / Case	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature	Drive Voltage (Max Rds On, Min Rds On)
Toshiba Semiconductor and Storage TK155A65Z,S4X	MOSFET (Metal Oxide)	Through Hole	29 nC	TO-220SIS	4 V	650 V	30 V	TO-220-3 Full Pack	40 W	18 A	N-Channel	1635 pF	150 °C	10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	50	$ 2.06

General part information

N-Channel 650 V 18A (Ta) 40W (Tc) Through Hole TO-220SIS

Technical documentation and resources