TK155A65Z Series
Manufacturer: Toshiba Semiconductor and Storage
Beta
⌘K
HIGH & LOW OUTPUT SOLUTIONS | TOSHIBA 400V - 900V MOSFETS, N-CH MOSFET, 650 V, 0.155 Ω@10V, TO-220SIS, DTMOSⅥ
| Part | Input Capacitance (Ciss) (Max) | Operating Temperature | Mounting Type | Power Dissipation (Max) | Technology | Drain to Source Voltage (Vdss) | Vgs(th) (Max) | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Max) | Vgs (Max) | Package / Case | Rds On (Max) | Current - Continuous Drain (Id) (Ta) | FET Type | Package Name |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 1635 pF | 150 °C | Through Hole | 40 W | MOSFET (Metal Oxide) | 650 V | 4 V | 10 V | 29 nC | 30 V | TO-220-3 Full Pack | 155 mOhm | 18 A 18 A | N-Channel | TO-220SIS |