TSM4NB65CH C5G

Obsolete

Taiwan Semiconductor Corporation

MOSFET N-CHANNEL 650V 4A TO251

Search across all available documentation for this part.

Obsolete

Taiwan Semiconductor Corporation

MOSFET N-CHANNEL 650V 4A TO251

Technical Specifications

Parameters and characteristics for this part

Specification	TSM4NB65CH C5G

Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	13.46 nC
Input Capacitance (Ciss) (Max) @ Vds	549 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)	70 W
Rds On (Max) @ Id, Vgs	3.37 Ohm
Supplier Device Package	TO-251 (IPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Part	Power Dissipation (Max)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Technology	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	FET Type	Vgs (Max)	Drain to Source Voltage (Vdss)	Package / Case	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C
Taiwan Semiconductor Corporation TSM4NB65CH C5G	70 W	Through Hole	549 pF	13.46 nC	MOSFET (Metal Oxide)	3.37 Ohm	-55 °C	150 °C	10 V	TO-251 (IPAK)	N-Channel	30 V	650 V	IPAK TO-251-3 Short Leads TO-251AA	4.5 V	4 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 650 V 4A (Tc) 70W (Tc) Through Hole TO-251 (IPAK)

Technical documentation and resources

No documents available