TSM4NB65 Series
Manufacturer: Taiwan Semiconductor Corporation
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MOSFET N-CHANNEL 650V 4A TO251
| Part | Vgs(th) (Max) | FET Type | Power Dissipation (Max) | Gate Charge (Max) | Mounting Type | Rds On (Max) | Drive Voltage (Max Rds On, Min Rds On) | Technology | Vgs (Max) | Current - Continuous Drain (Id) (Tc) | Drain to Source Voltage (Vdss) | Operating Temperature (Min) | Operating Temperature (Max) | Input Capacitance (Ciss) (Max) | Package Name | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Taiwan Semiconductor Corporation | 4.5 V | N-Channel | 70 W | 13.46 nC | Through Hole | 3.37 Ohm | 10 V | MOSFET (Metal Oxide) | 30 V | 4 A | 650 V | -55 °C | 150 °C | 549 pF | TO-251 (IPAK) | IPAK TO-251-3 Short Leads TO-251AA |