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MOSFET N-CHANNEL 650V 4A TO251
| Part | Power Dissipation (Max) | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Technology | Rds On (Max) @ Id, Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | FET Type | Vgs (Max) | Drain to Source Voltage (Vdss) | Package / Case | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Taiwan Semiconductor Corporation | 70 W | Through Hole | 549 pF | 13.46 nC | MOSFET (Metal Oxide) | 3.37 Ohm | -55 °C | 150 °C | 10 V | TO-251 (IPAK) | N-Channel | 30 V | 650 V | IPAK TO-251-3 Short Leads TO-251AA | 4.5 V | 4 A |