TK11S10N1L,LQ

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Toshiba Semiconductor and Storage

MOSFET N-CH 100V 11A DPAK

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Toshiba Semiconductor and Storage

MOSFET N-CH 100V 11A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	TK11S10N1L,LQ

Current - Continuous Drain (Id) @ 25°C	11 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	850 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	65 W
Rds On (Max) @ Id, Vgs	28 mOhm
Supplier Device Package	DPAK+
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Package / Case	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Technology	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Vgs (Max)	FET Type	Input Capacitance (Ciss) (Max) @ Vds
Toshiba Semiconductor and Storage TK11S10N1L,LXHQ	DPAK (2 Leads + Tab) SC-63 TO-252-3	11 A	28 mOhm	175 °C	Surface Mount	DPAK+	100 V	2.5 V	MOSFET (Metal Oxide)	4.5 V 10 V	65 W	20 V	N-Channel	850 pF
Toshiba Semiconductor and Storage TK11S10N1L,LQ	DPAK (2 Leads + Tab) SC-63 TO-252-3	11 A	28 mOhm	175 °C	Surface Mount	DPAK+	100 V	2.5 V	MOSFET (Metal Oxide)	4.5 V 10 V	65 W	20 V	N-Channel	850 pF

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General part information

N-Channel 100 V 11A (Ta) 65W (Tc) Surface Mount DPAK+

Technical documentation and resources