MOSFET N-CH 100V 11A DPAK
| Part | Package / Case | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Technology | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) | Vgs (Max) | FET Type | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 11 A | 28 mOhm | 175 °C | Surface Mount | DPAK+ | 100 V | 2.5 V | MOSFET (Metal Oxide) | 4.5 V 10 V | 65 W | 20 V | N-Channel | 850 pF |
Toshiba Semiconductor and Storage | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 11 A | 28 mOhm | 175 °C | Surface Mount | DPAK+ | 100 V | 2.5 V | MOSFET (Metal Oxide) | 4.5 V 10 V | 65 W | 20 V | N-Channel | 850 pF |