Specification	GB2X50MPS12-227

Current - Average Rectified (Io) (per Diode)	93 A
Current - Reverse Leakage	40 µA
Diode Configuration	Independent
Diode Count	2
Mounting Type	Chassis Mount
Operating Temperature - Junction (Max)	175 °C
Operating Temperature - Junction (Min)	-55 °C
Package / Case	SOT-227-4, miniBLOC
Package Name	SOT-227
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Speed - Fast Recovery (Minimum)	500 mA
Speed - Recovery Current	500 mA, 500 mA
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)	1200 V
Voltage - Forward (Vf) (Max)	1.8 V

GB2X50 Series

Part	Package Name	Mounting Type	Current - Reverse Leakage	Speed - Fast Recovery (Minimum)	Speed	Speed - Recovery Current	Voltage - DC Reverse (Vr) (Max)	Technology	Current - Average Rectified (Io) (per Diode)	Diode Count	Diode Configuration	Voltage - Forward (Vf) (Max)	Operating Temperature - Junction (Max)	Operating Temperature - Junction (Min)	Package / Case
GeneSiC Semiconductor GB2X50MPS12-227	SOT-227	Chassis Mount	40 µA	500 mA	No Recovery Time	500 mA 500 mA	1200 V	SiC (Silicon Carbide) Schottky	93 A	2	Independent	1.8 V	175 °C	-55 °C	miniBLOC SOT-227-4
GeneSiC Semiconductor GB2X50MPS17-227	SOT-227	Chassis Mount	50 µA	500 mA	No Recovery Time	500 mA 500 mA	1700 V	SiC (Silicon Carbide) Schottky	136 A	2	Independent	1.8 V	175 °C	-55 °C	miniBLOC SOT-227-4
GeneSiC Semiconductor GB2X50MPS17-227	SOT-227	Chassis Mount	50 µA	500 mA	No Recovery Time	500 mA 500 mA	1700 V	SiC (Silicon Carbide) Schottky	136 A	2	Independent	1.8 V	175 °C	-55 °C	miniBLOC SOT-227-4
GeneSiC Semiconductor GB2X50MPS12-227	SOT-227	Chassis Mount	40 µA	500 mA	No Recovery Time	500 mA 500 mA	1200 V	SiC (Silicon Carbide) Schottky	93 A	2	Independent	1.8 V	175 °C	-55 °C	miniBLOC SOT-227-4

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