GB2X50 Series

Catalog

DIODE MOD SIC 1200V 93A SOT227

Part	Package Name	Mounting Type	Current - Reverse Leakage	Speed - Fast Recovery (Minimum)	Speed	Speed - Recovery Current	Voltage - DC Reverse (Vr) (Max)	Technology	Current - Average Rectified (Io) (per Diode)	Diode Count	Diode Configuration	Voltage - Forward (Vf) (Max)	Operating Temperature - Junction (Max)	Operating Temperature - Junction (Min)	Package / Case
GeneSiC Semiconductor GB2X50MPS12-227	SOT-227	Chassis Mount	40 µA	500 mA	No Recovery Time	500 mA 500 mA	1200 V	SiC (Silicon Carbide) Schottky	93 A	2	Independent	1.8 V	175 °C	-55 °C	miniBLOC SOT-227-4
GeneSiC Semiconductor GB2X50MPS17-227	SOT-227	Chassis Mount	50 µA	500 mA	No Recovery Time	500 mA 500 mA	1700 V	SiC (Silicon Carbide) Schottky	136 A	2	Independent	1.8 V	175 °C	-55 °C	miniBLOC SOT-227-4
GeneSiC Semiconductor GB2X50MPS17-227	SOT-227	Chassis Mount	50 µA	500 mA	No Recovery Time	500 mA 500 mA	1700 V	SiC (Silicon Carbide) Schottky	136 A	2	Independent	1.8 V	175 °C	-55 °C	miniBLOC SOT-227-4
GeneSiC Semiconductor GB2X50MPS12-227	SOT-227	Chassis Mount	40 µA	500 mA	No Recovery Time	500 mA 500 mA	1200 V	SiC (Silicon Carbide) Schottky	93 A	2	Independent	1.8 V	175 °C	-55 °C	miniBLOC SOT-227-4