IPI65R380C6XKSA1

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Infineon Technologies

MOSFET N-CH 650V 10.6A TO262-3

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Infineon Technologies

MOSFET N-CH 650V 10.6A TO262-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPI65R380C6XKSA1

Current - Continuous Drain (Id) @ 25°C	10.6 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	39 nC
Input Capacitance (Ciss) (Max) @ Vds	710 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)	83 W
Rds On (Max) @ Id, Vgs	380 mOhm
Supplier Device Package	PG-TO262-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Drain to Source Voltage (Vdss)	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	FET Type	Technology	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)
Infineon Technologies IPI65R380C6XKSA1	650 V	20 V	710 pF	-55 °C	150 °C	Through Hole	N-Channel	MOSFET (Metal Oxide)	10 V	I2PAK TO-262-3 Long Leads TO-262AA	39 nC	PG-TO262-3	3.5 V	10.6 A	380 mOhm	83 W

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General part information

N-Channel 650 V 10.6A (Tc) 83W (Tc) Through Hole PG-TO262-3

Technical documentation and resources

No documents available