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⌘K
MOSFET N-CH 650V 10.6A TO262-3
| Part | Drain to Source Voltage (Vdss) | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | FET Type | Technology | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Gate Charge (Qg) (Max) @ Vgs [Max] | Supplier Device Package | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 650 V | 20 V | 710 pF | -55 °C | 150 °C | Through Hole | N-Channel | MOSFET (Metal Oxide) | 10 V | I2PAK TO-262-3 Long Leads TO-262AA | 39 nC | PG-TO262-3 | 3.5 V | 10.6 A | 380 mOhm | 83 W |