IPI80CN10N G

Obsolete

Infineon Technologies

MOSFET N-CH 100V 13A TO262-3

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Obsolete

Infineon Technologies

MOSFET N-CH 100V 13A TO262-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPI80CN10N G

Current - Continuous Drain (Id) @ 25°C	13 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	11 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	716 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)	31 W
Rds On (Max) @ Id, Vgs	80 mOhm
Supplier Device Package	PG-TO262-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	Power Dissipation (Max)	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Vgs(th) (Max) @ Id	Package / Case	Supplier Device Package	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	FET Type
Infineon Technologies IPI80CN10N G	716 pF	MOSFET (Metal Oxide)	31 W	20 V	10 V	11 nC	Through Hole	4 V	I2PAK TO-262-3 Long Leads TO-262AA	PG-TO262-3	80 mOhm	-55 °C	175 ░C	13 A	100 V	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 100 V 13A (Tc) 31W (Tc) Through Hole PG-TO262-3

Technical documentation and resources