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MOSFET N-CH 100V 13A TO262-3
| Part | Input Capacitance (Ciss) (Max) @ Vds [Max] | Technology | Power Dissipation (Max) | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs [Max] | Mounting Type | Vgs(th) (Max) @ Id | Package / Case | Supplier Device Package | Rds On (Max) @ Id, Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 716 pF | MOSFET (Metal Oxide) | 31 W | 20 V | 10 V | 11 nC | Through Hole | 4 V | I2PAK TO-262-3 Long Leads TO-262AA | PG-TO262-3 | 80 mOhm | -55 °C | 175 ░C | 13 A | 100 V | N-Channel |