SUM90330E-GE3

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Vishay Siliconix

MOSFET N-CH 200V 35.1A TO263

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Vishay Siliconix

MOSFET N-CH 200V 35.1A TO263

Technical Specifications

Parameters and characteristics for this part

Specification	SUM90330E-GE3

Current - Continuous Drain (Id) @ 25°C	35.1 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	7.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	32 nC
Input Capacitance (Ciss) (Max) @ Vds	1172 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	125 W
Rds On (Max) @ Id, Vgs	37.5 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

MOSFET N-CH 200V 35.1A TO263

Part	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Mounting Type	Supplier Device Package	Vgs(th) (Max) @ Id	Power Dissipation (Max)	FET Type	Technology	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Drain to Source Voltage (Vdss)
Vishay Siliconix SUM90330E-GE3	1172 pF	10 V	7.5 V	Surface Mount	TO-263 (D2PAK)	4 V	125 W	N-Channel	MOSFET (Metal Oxide)	37.5 mOhm	32 nC	20 V	35.1 A	-55 °C	175 ░C	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB	200 V

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General part information

N-Channel 200 V 35.1A (Tc) 125W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources