MOSFET N-CH 200V 35.1A TO263
| Part | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Mounting Type | Supplier Device Package | Vgs(th) (Max) @ Id | Power Dissipation (Max) | FET Type | Technology | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay Siliconix SUM90330E-GE3 | 1172 pF | 10 V | 7.5 V | Surface Mount | TO-263 (D2PAK) | 4 V | 125 W | N-Channel | MOSFET (Metal Oxide) | 37.5 mOhm | 32 nC | 20 V | 35.1 A | -55 °C | 175 ░C | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB | 200 V |