SSM3K301T(TE85L,F)

Obsolete

Toshiba Semiconductor and Storage

MOSFET N-CH 20V 3.5A TSM

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Obsolete

Toshiba Semiconductor and Storage

MOSFET N-CH 20V 3.5A TSM

Technical Specifications

Parameters and characteristics for this part

Specification	SSM3K301T(TE85L,F)

Current - Continuous Drain (Id) @ 25°C	3.5 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	1.8 V, 4 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	4.8 nC
Input Capacitance (Ciss) (Max) @ Vds	320 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	700 mW
Rds On (Max) @ Id, Vgs [Max]	56 mOhm
Supplier Device Package	TSM
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V

Part	Rds On (Max) @ Id, Vgs [Max]	Power Dissipation (Max)	Technology	Current - Continuous Drain (Id) @ 25°C	Package / Case	FET Type	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Operating Temperature	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type
Toshiba Semiconductor and Storage SSM3K301T(TE85L,F)	56 mOhm	700 mW	MOSFET (Metal Oxide)	3.5 A	SC-59 SOT-23-3 TO-236-3	N-Channel	TSM	1.8 V 4 V	320 pF	20 V	150 °C	12 V	4.8 nC	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 20 V 3.5A (Ta) 700mW (Ta) Surface Mount TSM

Technical documentation and resources