Beta
⌘K
MOSFET N-CH 20V 3.5A TSM
| Part | Rds On (Max) @ Id, Vgs [Max] | Power Dissipation (Max) | Technology | Current - Continuous Drain (Id) @ 25°C | Package / Case | FET Type | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Operating Temperature | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 56 mOhm | 700 mW | MOSFET (Metal Oxide) | 3.5 A | SC-59 SOT-23-3 TO-236-3 | N-Channel | TSM | 1.8 V 4 V | 320 pF | 20 V | 150 °C | 12 V | 4.8 nC | Surface Mount |