PMPB10XNEAX

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Nexperia USA Inc.

TRANS MOSFET N-CH 20V 9A 6-PIN DFN-MD EP T/R AUTOMOTIVE AEC-Q101

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PMPB10XNEAX

Active

Nexperia USA Inc.

TRANS MOSFET N-CH 20V 9A 6-PIN DFN-MD EP T/R AUTOMOTIVE AEC-Q101

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Description Specifications Series Pricing CAD Documents

Description

General part information

PMPB10XNEA Series

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Technical Specifications

Parameters and characteristics for this part

Specification	PMPB10XNEAX

Current - Continuous Drain (Id) (Ta)	9 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	1.8 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	N-Channel
Gate Charge (Max)	34 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	2175 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	6-UDFN Exposed Pad
Package Name	DFN2020MD-6
Power Dissipation (Max)	12.5 W, 1.7 W
Qualification	AEC-Q101
Rds On (Max)	14 mOhm, 14 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max)	900 mV

PMPB10XNEA Series

20 V, N-channel Trench MOSFET

Part	Vgs(th) (Max)	Gate Charge (Max)	Grade	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Package Name	Input Capacitance (Ciss) (Max)	Drain to Source Voltage (Vdss)	Mounting Type	Technology	Package / Case	Vgs (Max)	FET Type	Qualification	Power Dissipation (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Rds On (Max)	Current - Continuous Drain (Id) (Ta)
Nexperia USA Inc. PMPB10XNEAX	900 mV	34 nC	Automotive	4.5 V	1.8 V	DFN2020MD-6	2175 pF	20 V	Surface Mount	MOSFET (Metal Oxide)	6-UDFN Exposed Pad	12 V	N-Channel	AEC-Q101	1.7 W 12.5 W	-55 °C	150 °C	14 mOhm 14 mOhm	9 A