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20 V, N-channel Trench MOSFET
Description
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N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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20 V, N-channel Trench MOSFET
20 V, N-channel Trench MOSFET
| Part | Vgs(th) (Max) | Gate Charge (Max) | Grade | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Package Name | Input Capacitance (Ciss) (Max) | Drain to Source Voltage (Vdss) | Mounting Type | Technology | Package / Case | Vgs (Max) | FET Type | Qualification | Power Dissipation (Max) | Operating Temperature (Min) | Operating Temperature (Max) | Rds On (Max) | Current - Continuous Drain (Id) (Ta) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 900 mV | 34 nC | Automotive | 4.5 V | 1.8 V | DFN2020MD-6 | 2175 pF | 20 V | Surface Mount | MOSFET (Metal Oxide) | 6-UDFN Exposed Pad | 12 V | N-Channel | AEC-Q101 | 1.7 W 12.5 W | -55 °C | 150 °C | 14 mOhm 14 mOhm | 9 A |