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CSD17313Q2T - https://ti.com/content/dam/ticom/images/products/package/d/dqk0006a.png

CSD17313Q2T

Active
Texas Instruments

30-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 2 MM X 2 MM, 32 MOHM 6-WSON -55 TO 150

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Search across all available documentation for this part.

DocumentsUsing MOSFET Safe Operating Area Curves in Your DesignPower Management Guide 2018 (Rev. R)+11
CSD17313Q2T - https://ti.com/content/dam/ticom/images/products/package/d/dqk0006a.png

CSD17313Q2T

Active
Texas Instruments

30-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 2 MM X 2 MM, 32 MOHM 6-WSON -55 TO 150

Deep-Dive with AI

DocumentsUsing MOSFET Safe Operating Area Curves in Your DesignPower Management Guide 2018 (Rev. R)+11

Technical Specifications

Parameters and characteristics for this part

SpecificationCSD17313Q2T
Current - Continuous Drain (Id) @ 25°C5 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)3 V, 8 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs2.7 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]340 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Power Dissipation (Max)17 W, 2.4 W
Rds On (Max) @ Id, Vgs [Max]30 mOhm
Supplier Device Package6-WSON (2x2)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)10 V, -8 V
Vgs(th) (Max) @ Id [Max]1.8 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
CHIPMALL.COM LIMITEDN/A 5$ 0.61
5$ 0.61
5$ 0.61
Chip1StopN/A 1$ 0.45
1$ 0.44
1$ 0.45
1$ 0.45
10$ 0.38
10$ 0.39
10$ 0.38
10$ 0.38
50$ 0.38
50$ 0.39
50$ 0.38
50$ 0.38
DigiKeyN/A 1$ 1.75
1$ 1.40
1$ 1.75
1$ 1.75
10$ 1.11
10$ 0.94
10$ 1.11
10$ 1.11
100$ 1.75
100$ 0.66
100$ 0.74
100$ 1.75
250$ 0.47
250$ 0.47
250$ 0.47
500$ 0.43
500$ 0.43
500$ 0.43
DigikeyCut Tape (CT) 1$ 0.82
10$ 0.67
100$ 0.52
Digi-Reel® 1$ 0.82
10$ 0.67
100$ 0.52
Tape & Reel (TR) 250$ 0.51
500$ 0.44
1250$ 0.43
FarnellN/A 1$ 0.88
10$ 0.72
100$ 0.70
100$ 0.70
500$ 0.68
500$ 0.68
1000$ 0.66
1000$ 0.66
5000$ 0.64
5000$ 0.64
Mouser ElectronicsN/A 1$ 1.17
1$ 1.17
1$ 1.17
10$ 0.82
10$ 0.82
10$ 0.82
100$ 0.46
100$ 0.46
100$ 0.46
250$ 0.46
250$ 0.46
250$ 0.46
500$ 0.43
500$ 0.43
500$ 0.43
TMEN/A 1$ 1.60
1$ 1.60
1$ 1.60
5$ 0.86
5$ 0.86
5$ 0.86
25$ 0.76
25$ 0.76
25$ 0.76
100$ 0.70
100$ 0.70
100$ 0.70
Texas InstrumentsSMALL T&R 1$ 1.00
100$ 0.68
250$ 0.52
1000$ 0.35
Win Source ElectronicsN/A 115$ 0.44
115$ 0.44
280$ 0.36
280$ 0.36
435$ 0.35
435$ 0.35
600$ 0.34
600$ 0.34
770$ 0.33
770$ 0.33
1035$ 0.29
1035$ 0.29

CSD17313Q2 Series

30-V, N channel NexFET™ power MOSFET, single SON 2 mm x 2 mm, 32 mOhm

PartVgs(th) (Max) @ Id [Max]Supplier Device PackageDrain to Source Voltage (Vdss)Vgs (Max)Gate Charge (Qg) (Max) @ VgsMounting TypeFET TypeOperating Temperature [Max]Operating Temperature [Min]Power Dissipation (Max)Current - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Input Capacitance (Ciss) (Max) @ Vds [Max]Rds On (Max) @ Id, Vgs [Max]Technology
Texas Instruments
CSD17313Q2T
1.8 V
6-WSON (2x2)
30 V
-8 V, 10 V
2.7 nC
Surface Mount
N-Channel
150 °C
-55 °C
2.4 W, 17 W
5 A
3 V, 8 V
340 pF
30 mOhm
MOSFET (Metal Oxide)

Description

General part information

CSD17313Q2 Series

This 30-V, 24-mΩ, 2-mm × 2-mm SON NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5-V gate drive applications. The 2-mm × 2-mm SON offers excellent thermal performance for the size of the package.

This 30-V, 24-mΩ, 2-mm × 2-mm SON NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5-V gate drive applications. The 2-mm × 2-mm SON offers excellent thermal performance for the size of the package.