IXTY4N65X2

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IXYS

MOSFET N-CH 650V 4A TO252

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IXYS

MOSFET N-CH 650V 4A TO252

Technical Specifications

Parameters and characteristics for this part

Specification	IXTY4N65X2

Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	8.3 nC
Input Capacitance (Ciss) (Max) @ Vds	455 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	80 W
Rds On (Max) @ Id, Vgs	850 mOhm
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Power Dissipation (Max)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Technology	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Mounting Type	Vgs (Max)	FET Type	Supplier Device Package	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)
IXYS IXTY4N65X2	80 W	DPAK (2 Leads + Tab) SC-63 TO-252-3	4 A	MOSFET (Metal Oxide)	850 mOhm	-55 °C	150 °C	455 pF	8.3 nC	650 V	Surface Mount	30 V	N-Channel	TO-252AA	5 V	10 V
IXYS IXTY4N60P		DPAK (2 Leads + Tab) SC-63 TO-252-3	4 A	MOSFET (Metal Oxide)	2 Ohm	-55 °C	150 °C	635 pF	13 nC	600 V	Surface Mount	30 V	N-Channel	TO-252AA	5.5 V	10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 650 V 4A (Tc) 80W (Tc) Surface Mount TO-252AA

Technical documentation and resources

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