Beta
⌘K
MOSFET N-CH 650V 4A TO252
| Part | Power Dissipation (Max) | Package / Case | Current - Continuous Drain (Id) @ 25°C | Technology | Rds On (Max) @ Id, Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs [Max] | Drain to Source Voltage (Vdss) | Mounting Type | Vgs (Max) | FET Type | Supplier Device Package | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXYS | 80 W | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 4 A | MOSFET (Metal Oxide) | 850 mOhm | -55 °C | 150 °C | 455 pF | 8.3 nC | 650 V | Surface Mount | 30 V | N-Channel | TO-252AA | 5 V | 10 V |
IXYS | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 4 A | MOSFET (Metal Oxide) | 2 Ohm | -55 °C | 150 °C | 635 pF | 13 nC | 600 V | Surface Mount | 30 V | N-Channel | TO-252AA | 5.5 V | 10 V |