IPB60R299CPAATMA1

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Infineon Technologies

MOSFET N-CH 600V 11A TO263-3

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LTB

Infineon Technologies

MOSFET N-CH 600V 11A TO263-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPB60R299CPAATMA1

Current - Continuous Drain (Id) @ 25°C	11 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	29 nC
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	96 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	299 mOhm
Supplier Device Package	PG-TO263-3-2
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Mounting Type	Grade	Qualification	Operating Temperature [Max]	Operating Temperature [Min]	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Supplier Device Package	Technology
Infineon Technologies IPB60R299CPAATMA1	299 mOhm	29 nC	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	20 V	11 A	600 V	96 W	Surface Mount	Automotive	AEC-Q101	150 °C	-40 °C	3.5 V	10 V	N-Channel	PG-TO263-3-2	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 600 V 11A (Tc) 96W (Tc) Surface Mount PG-TO263-3-2

Technical documentation and resources

No documents available