IPB60R299 Series

Catalog

MOSFET N-CH 600V 11A TO263-3

Part	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Mounting Type	Grade	Qualification	Operating Temperature [Max]	Operating Temperature [Min]	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Supplier Device Package	Technology
Infineon Technologies IPB60R299CPAATMA1	299 mOhm	29 nC	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	20 V	11 A	600 V	96 W	Surface Mount	Automotive	AEC-Q101	150 °C	-40 °C	3.5 V	10 V	N-Channel	PG-TO263-3-2	MOSFET (Metal Oxide)