Specification	GT30J121(Q)

Current - Collector (Ic) (Max)	30 A
Current - Collector Pulsed (Icm)	60 A
Input Type	Standard
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Package Name	TO-3P(N)
Power - Max	170 W
Switching Energy (Off)	800 µJ
Switching Energy (On)	1 mJ
Td (off) @ 25°C	300 ns
Td (on) @ 25°C	90 ns
Test Condition Current	30 A
Test Condition Resistance	24 Ohm
Test Condition Voltage	300 V
Test Condition Voltage (Secondary)	15 V
Vce(on) (Max)	2.45 V
Voltage - Collector Emitter Breakdown (Max)	600 V

GT30J121 Series

Part	Current - Collector Pulsed (Icm)	Power - Max	Input Type	Current - Collector (Ic) (Max)	Package Name	Mounting Type	Td (off) @ 25°C	Td (on) @ 25°C	Voltage - Collector Emitter Breakdown (Max)	Test Condition Voltage	Test Condition Resistance	Test Condition Current	Test Condition Voltage (Secondary)	Package / Case	Vce(on) (Max)	Switching Energy (Off)	Switching Energy (On)
Toshiba Semiconductor and Storage GT30J121(Q)	60 A	170 W	Standard	30 A	TO-3P(N)	Through Hole	300 ns	90 ns	600 V	300 V	24 Ohm	30 A	15 V	SC-65-3 TO-3P-3	2.45 V	800 µJ	1 mJ

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