GT30J121(Q)

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Toshiba Semiconductor and Storage

IGBT 600V 30A 170W TO3PN

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Toshiba Semiconductor and Storage

IGBT 600V 30A 170W TO3PN

Technical Specifications

Parameters and characteristics for this part

Specification	GT30J121(Q)

Current - Collector (Ic) (Max) [Max]	30 A
Current - Collector Pulsed (Icm)	60 A
Mounting Type	Through Hole
Package / Case	SC-65-3, TO-3P-3
Power - Max [Max]	170 W
Supplier Device Package	TO-3P(N)
Switching Energy	1 mJ, 800 µJ
Td (on/off) @ 25°C	90 ns
Td (on/off) @ 25°C	300 ns
Test Condition	30 A, 24 Ohm, 15 V, 300 V
Vce(on) (Max) @ Vge, Ic	2.45 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

Part	Power - Max [Max]	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Mounting Type	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Switching Energy	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	Package / Case	Test Condition	Current - Collector (Ic) (Max) [Max]
Toshiba Semiconductor and Storage GT30J121(Q)	170 W	60 A	2.45 V	Through Hole	90 ns	300 ns	1 mJ 800 µJ	600 V	TO-3P(N)	SC-65-3 TO-3P-3	15 V 24 Ohm 30 A 300 V	30 A

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General part information

IGBT 600 V 30 A 170 W Through Hole TO-3P(N)

Technical documentation and resources