Beta
⌘K
IGBT 600V 30A 170W TO3PN
| Part | Power - Max [Max] | Current - Collector Pulsed (Icm) | Vce(on) (Max) @ Vge, Ic | Mounting Type | Td (on/off) @ 25°C | Td (on/off) @ 25°C | Switching Energy | Voltage - Collector Emitter Breakdown (Max) [Max] | Supplier Device Package | Package / Case | Test Condition | Current - Collector (Ic) (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 170 W | 60 A | 2.45 V | Through Hole | 90 ns | 300 ns | 1 mJ 800 µJ | 600 V | TO-3P(N) | SC-65-3 TO-3P-3 | 15 V 24 Ohm 30 A 300 V | 30 A |