GT30J121 Series
Manufacturer: Toshiba Semiconductor and Storage
Beta
⌘K
IGBTS, 600 V/30 A IGBT, TO-3P(N)
| Part | Current - Collector Pulsed (Icm) | Power - Max | Input Type | Current - Collector (Ic) (Max) | Package Name | Mounting Type | Td (off) @ 25°C | Td (on) @ 25°C | Voltage - Collector Emitter Breakdown (Max) | Test Condition Voltage | Test Condition Resistance | Test Condition Current | Test Condition Voltage (Secondary) | Package / Case | Vce(on) (Max) | Switching Energy (Off) | Switching Energy (On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 60 A | 170 W | Standard | 30 A | TO-3P(N) | Through Hole | 300 ns | 90 ns | 600 V | 300 V | 24 Ohm | 30 A | 15 V | SC-65-3 TO-3P-3 | 2.45 V | 800 µJ | 1 mJ |