SPP04N80C3XK

Obsolete

Infineon Technologies

MOSFET N-CH 800V 4A TO220-3

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Obsolete

Infineon Technologies

MOSFET N-CH 800V 4A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	SPP04N80C3XK

Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	31 nC
Input Capacitance (Ciss) (Max) @ Vds	570 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	63 W
Rds On (Max) @ Id, Vgs	1.3 Ohm
Supplier Device Package	PG-TO220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.9 V

Part	Vgs(th) (Max) @ Id	FET Type	Package / Case	Vgs (Max)	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Technology	Drain to Source Voltage (Vdss)	Mounting Type	Power Dissipation (Max)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds
Infineon Technologies SPP04N80C3XK	3.9 V	N-Channel	TO-220-3	20 V	1.3 Ohm	4 A	-55 °C	150 °C	10 V	31 nC	MOSFET (Metal Oxide)	800 V	Through Hole	63 W	PG-TO220-3	570 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 800 V 4A (Tc) 63W (Tc) Through Hole PG-TO220-3

Technical documentation and resources

No documents available