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MOSFET N-CH 800V 4A TO220-3
| Part | Vgs(th) (Max) @ Id | FET Type | Package / Case | Vgs (Max) | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Min] | Operating Temperature [Max] | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs | Technology | Drain to Source Voltage (Vdss) | Mounting Type | Power Dissipation (Max) | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 3.9 V | N-Channel | TO-220-3 | 20 V | 1.3 Ohm | 4 A | -55 °C | 150 °C | 10 V | 31 nC | MOSFET (Metal Oxide) | 800 V | Through Hole | 63 W | PG-TO220-3 | 570 pF |