TSM4946DCS RLG

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Taiwan Semiconductor Corporation

MOSFET 2N-CH 60V 4.5A 8SOP

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Taiwan Semiconductor Corporation

MOSFET 2N-CH 60V 4.5A 8SOP

Technical Specifications

Parameters and characteristics for this part

Specification	TSM4946DCS RLG

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	4.5 A
Drain to Source Voltage (Vdss)	60 V
Gate Charge (Qg) (Max) @ Vgs [Max]	18 nC
Input Capacitance (Ciss) (Max) @ Vds	910 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	2.4 W
Rds On (Max) @ Id, Vgs [Max]	55 mOhm
Supplier Device Package	8-SOP
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Package / Case	Package / Case [y]	Package / Case [x]	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs [Max]	Power - Max [Max]	Configuration	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Drain to Source Voltage (Vdss)
Taiwan Semiconductor Corporation TSM4946DCS RLG	18 nC	-55 °C	150 °C	MOSFET (Metal Oxide)	8-SOIC	3.9 mm	0.154 in	8-SOP	910 pF	55 mOhm	2.4 W	2 N-Channel (Dual)	3 V	4.5 A	Surface Mount	60 V

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General part information

Mosfet Array 60V 4.5A (Ta) 2.4W Surface Mount 8-SOP

Technical documentation and resources