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MOSFET 2N-CH 60V 4.5A 8SOP
| Part | Gate Charge (Qg) (Max) @ Vgs [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Technology | Package / Case | Package / Case [y] | Package / Case [x] | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs [Max] | Power - Max [Max] | Configuration | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Taiwan Semiconductor Corporation | 18 nC | -55 °C | 150 °C | MOSFET (Metal Oxide) | 8-SOIC | 3.9 mm | 0.154 in | 8-SOP | 910 pF | 55 mOhm | 2.4 W | 2 N-Channel (Dual) | 3 V | 4.5 A | Surface Mount | 60 V |