PSMN1R1-30YLEX

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Nexperia USA Inc.

N-CHANNEL 30 V, 1.3 MOHM, ASFET FOR HOTSWAP WITH ENHANCED SOA IN LFPAK56

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PSMN1R1-30YLEX

Active

Nexperia USA Inc.

N-CHANNEL 30 V, 1.3 MOHM, ASFET FOR HOTSWAP WITH ENHANCED SOA IN LFPAK56

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Description Specifications Series Pricing CAD Documents

Description

General part information

PSMN1 Series

N-channel enhancement mode ASFET for hotswap with enhanced SOA in LFPAK56 package optimized for low RDSonand strong safe operating area, optimized for hot-swap, inrush and linear-mode applications.

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN1R1-30YLEX

Current - Continuous Drain (Id) (Tc)	265 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	7 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	102 nC
Input Capacitance (Ciss) (Max)	6317 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	SOT-669, SC-100
Package Name	LFPAK56, Power-SO8
Power Dissipation (Max)	192 W
Rds On (Max)	1.26 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.2 V

PSMN1 Series

N-channel 30 V, 1.3 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56

Part	Gate Charge (Max)	Power Dissipation (Max)	Rds On (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Mounting Type	FET Type	Drain to Source Voltage (Vdss)	Package Name	Input Capacitance (Ciss) (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Package / Case	Technology	Vgs(th) (Max)	Current - Continuous Drain (Id) (Tc)	Vgs (Max)
Nexperia USA Inc. PSMN1R6-25YLEX	61 nC	124 W	1.88 mOhm	-55 °C	175 °C	Surface Mount	N-Channel	25 V	LFPAK56 Power-SO8	3698 pF	10 V	7 V	SC-100 SOT-669	MOSFET (Metal Oxide)	2.2 V	185 A	20 V
Nexperia USA Inc. PSMN1R1-30YLEX	102 nC	192 W	1.26 mOhm	-55 °C	175 °C	Surface Mount	N-Channel	30 V	LFPAK56 Power-SO8	6317 pF	10 V	7 V	SC-100 SOT-669	MOSFET (Metal Oxide)	2.2 V	265 A	20 V