PSMN1 Series

N-channel 30 V, 1.3 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56

Catalog

N-channel 30 V, 1.3 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56

Part	Gate Charge (Max)	Power Dissipation (Max)	Rds On (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Mounting Type	FET Type	Drain to Source Voltage (Vdss)	Package Name	Input Capacitance (Ciss) (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Package / Case	Technology	Vgs(th) (Max)	Current - Continuous Drain (Id) (Tc)	Vgs (Max)
Nexperia USA Inc. PSMN1R6-25YLEX	61 nC	124 W	1.88 mOhm	-55 °C	175 °C	Surface Mount	N-Channel	25 V	LFPAK56 Power-SO8	3698 pF	10 V	7 V	SC-100 SOT-669	MOSFET (Metal Oxide)	2.2 V	185 A	20 V
Nexperia USA Inc. PSMN1R1-30YLEX	102 nC	192 W	1.26 mOhm	-55 °C	175 °C	Surface Mount	N-Channel	30 V	LFPAK56 Power-SO8	6317 pF	10 V	7 V	SC-100 SOT-669	MOSFET (Metal Oxide)	2.2 V	265 A	20 V

Catalog

N-channel 30 V, 1.3 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56

Description

N-channel enhancement mode ASFET for hotswap with enhanced SOA in LFPAK56 package optimized for low RDSonand strong safe operating area, optimized for hot-swap, inrush and linear-mode applications.