2STBN15D100T4

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STMicroelectronics

TRANS NPN DARL 100V 12A D2PAK

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STMicroelectronics

TRANS NPN DARL 100V 12A D2PAK

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	2STBN15D100T4	2STBN15 Series

	-	-
Current - Collector (Ic) (Max) [Max]	12 A	12 A
Current - Collector Cutoff (Max) [Max]	100 µA	100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce	750 hFE	750 hFE
Mounting Type	Surface Mount	Surface Mount
Operating Temperature	150 °C	150 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power - Max [Max]	70 W	70 W
Supplier Device Package	TO-263 (D2PAK)	TO-263 (D2PAK)
Vce Saturation (Max) @ Ib, Ic [Max]	1.3 V	1.3 V
Voltage - Collector Emitter Breakdown (Max) [Max]	100 V	100 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Low voltage NPN power Darlington transistor

Part	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic [Max]	Mounting Type	Package / Case	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Operating Temperature	Voltage - Collector Emitter Breakdown (Max) [Max]
STMicroelectronics 2STBN15D100
STMicroelectronics 2STBN15D100T4	100 µA	1.3 V	Surface Mount	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB	70 W	750 hFE	12 A	TO-263 (D2PAK)	150 °C	100 V
STMicroelectronics 2STBN15D100
STMicroelectronics 2STBN15D100	100 µA	1.3 V	Surface Mount	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB	70 W	750 hFE	12 A	TO-263 (D2PAK)	150 °C	100 V
STMicroelectronics 2STBN15D100

General part information

The device is manufactured in planar technology with "base island" layout and monolithic Darlington configuration.

Technical documentation and resources