Catalog
Low voltage NPN power Darlington transistor
Description
AI
The device is manufactured in planar technology with "base island" layout and monolithic Darlington configuration.
Low voltage NPN power Darlington transistor
Low voltage NPN power Darlington transistor
| Part | Current - Collector Cutoff (Max) [Max] | Vce Saturation (Max) @ Ib, Ic [Max] | Mounting Type | Package / Case | Power - Max [Max] | DC Current Gain (hFE) (Min) @ Ic, Vce | Current - Collector (Ic) (Max) [Max] | Supplier Device Package | Operating Temperature | Voltage - Collector Emitter Breakdown (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics 2STBN15D100 | ||||||||||
STMicroelectronics 2STBN15D100T4 | 100 µA | 1.3 V | Surface Mount | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB | 70 W | 750 hFE | 12 A | TO-263 (D2PAK) | 150 °C | 100 V |
STMicroelectronics 2STBN15D100 | ||||||||||
STMicroelectronics 2STBN15D100 | 100 µA | 1.3 V | Surface Mount | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB | 70 W | 750 hFE | 12 A | TO-263 (D2PAK) | 150 °C | 100 V |
STMicroelectronics 2STBN15D100 |