IPB70N12S3L12ATMA1

Obsolete

Infineon Technologies

MOSFET N-CHANNEL_100+

Search across all available documentation for this part.

Obsolete

Infineon Technologies

MOSFET N-CHANNEL_100+

Technical Specifications

Parameters and characteristics for this part

Specification	IPB70N12S3L12ATMA1

Current - Continuous Drain (Id) @ 25°C	70 A
Drain to Source Voltage (Vdss)	120 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	77 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	5550 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	125 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs [Max]	12.1 mOhm
Supplier Device Package	PG-TO263-3-2
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.4 V

Part	Supplier Device Package	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs [Max]	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Technology	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Grade	Package / Case	Mounting Type	Qualification	Rds On (Max) @ Id, Vgs
Infineon Technologies IPB70N12S3L12ATMA1	PG-TO263-3-2	120 V	125 W	77 nC	12.1 mOhm	20 V	5550 pF	MOSFET (Metal Oxide)	4.5 V 10 V	N-Channel	2.4 V	70 A	-55 °C	175 ░C	Automotive	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	AEC-Q101
Infineon Technologies IPB70N04S3-07	PG-TO263-3-2	40 V	79 W	40 nC		20 V		MOSFET (Metal Oxide)	10 V	N-Channel	4 V		-55 °C	175 ░C		D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount		6.2 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 120 V 70A (Tc) 125W (Tc) Surface Mount PG-TO263-3-2

Technical documentation and resources