IPB70N Series

Catalog

MOSFET N-CHANNEL_100+

Part	Supplier Device Package	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs [Max]	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Technology	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Grade	Package / Case	Mounting Type	Qualification	Rds On (Max) @ Id, Vgs
Infineon Technologies IPB70N12S3L12ATMA1	PG-TO263-3-2	120 V	125 W	77 nC	12.1 mOhm	20 V	5550 pF	MOSFET (Metal Oxide)	4.5 V 10 V	N-Channel	2.4 V	70 A	-55 °C	175 ░C	Automotive	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	AEC-Q101
Infineon Technologies IPB70N04S3-07	PG-TO263-3-2	40 V	79 W	40 nC		20 V		MOSFET (Metal Oxide)	10 V	N-Channel	4 V		-55 °C	175 ░C		D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount		6.2 mOhm