IDH12G65C5XKSA1

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Infineon Technologies

DIODE SIL CARB 650V 12A TO220-2

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Infineon Technologies

DIODE SIL CARB 650V 12A TO220-2

Technical Specifications

Parameters and characteristics for this part

Specification	IDH12G65C5XKSA1

Capacitance @ Vr, F	360 pF
Current - Average Rectified (Io)	12 A
Current - Reverse Leakage @ Vr	190 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	PG-TO220-2
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V

Part	Current - Reverse Leakage @ Vr	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Current - Average Rectified (Io)	Technology	Supplier Device Package	Reverse Recovery Time (trr)	Capacitance @ Vr, F	Voltage - DC Reverse (Vr) (Max) [Max]	Speed
Infineon Technologies IDH12S60CAKSA1	160 µA	Through Hole	175 ░C	-55 C	TO-220-2	12 A	SiC (Silicon Carbide) Schottky	PG-TO220-2-2	0 ns	530 pF	600 V	No Recovery Time
Infineon Technologies IDH12G65C5XKSA1	190 µA	Through Hole	175 ░C	-55 C	TO-220-2	12 A	SiC (Silicon Carbide) Schottky	PG-TO220-2	0 ns	360 pF	650 V	No Recovery Time

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 650 V 12A Through Hole PG-TO220-2

Technical documentation and resources