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DIODE SIL CARB 600V 12A TO220-2
| Part | Current - Reverse Leakage @ Vr | Mounting Type | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Package / Case | Current - Average Rectified (Io) | Technology | Supplier Device Package | Reverse Recovery Time (trr) | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) [Max] | Speed |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 160 µA | Through Hole | 175 ░C | -55 C | TO-220-2 | 12 A | SiC (Silicon Carbide) Schottky | PG-TO220-2-2 | 0 ns | 530 pF | 600 V | No Recovery Time |
Infineon Technologies | 190 µA | Through Hole | 175 ░C | -55 C | TO-220-2 | 12 A | SiC (Silicon Carbide) Schottky | PG-TO220-2 | 0 ns | 360 pF | 650 V | No Recovery Time |