IPI65R600C6XKSA1

Obsolete

Infineon Technologies

MOSFET N-CH 650V 7.3A TO262-3

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IPI65R600C6XKSA1

Obsolete

Infineon Technologies

MOSFET N-CH 650V 7.3A TO262-3

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPI65R600C6XKSA1

Current - Continuous Drain (Id) @ 25°C	7.3 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	23 nC
Input Capacitance (Ciss) (Max) @ Vds	440 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)	63 W
Rds On (Max) @ Id, Vgs	600 mOhm
Supplier Device Package	PG-TO262-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

IPI65R Series

Part	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	FET Type	Package / Case	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id	Vgs (Max)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs
Infineon Technologies IPI65R280E6XKSA1	MOSFET (Metal Oxide)	45 nC	104 W	650 V	Through Hole	13.8 A	N-Channel	I2PAK TO-262-3 Long Leads TO-262AA	280 mOhm	-55 °C	150 °C	10 V	950 pF	3.5 V	20 V
Infineon Technologies IPI65R110CFDXKSA1	MOSFET (Metal Oxide)	118 nC		650 V	Through Hole	31.2 A	N-Channel	I2PAK TO-262-3 Long Leads TO-262AA	110 mOhm	-55 °C	150 °C	10 V		4.5 V	20 V	PG-TO262-3	3240 pF	277.8 W
Infineon Technologies IPI65R660CFDXKSA1	MOSFET (Metal Oxide)	22 nC		650 V	Through Hole	6 A	N-Channel	I2PAK TO-262-3 Long Leads TO-262AA	660 mOhm	-55 °C	150 °C	10 V		4.5 V	20 V	PG-TO262-3	615 pF	62.5 W
Infineon Technologies IPI65R310CFDXKSA1	MOSFET (Metal Oxide)	41 nC		650 V	Through Hole	11.4 A	N-Channel	I2PAK TO-262-3 Long Leads TO-262AA	310 mOhm	-55 °C	150 °C	10 V		4.5 V	20 V	PG-TO262-3		104.2 W
Infineon Technologies IPI65R280C6XKSA1	MOSFET (Metal Oxide)	45 nC	104 W	650 V	Through Hole	13.8 A	N-Channel	I2PAK TO-262-3 Long Leads TO-262AA	280 mOhm	-55 °C	150 °C	10 V	950 pF	3.5 V	20 V	PG-TO262-3
Infineon Technologies IPI65R600C6XKSA1	MOSFET (Metal Oxide)		63 W	650 V	Through Hole	7.3 A	N-Channel	I2PAK TO-262-3 Long Leads TO-262AA	600 mOhm	-55 °C	150 °C	10 V		3.5 V	20 V	PG-TO262-3	440 pF		23 nC
Infineon Technologies IPI65R099C6XKSA1	MOSFET (Metal Oxide)		278 W	650 V	Through Hole	38 A	N-Channel	I2PAK TO-262-3 Long Leads TO-262AA	99 mOhm	-55 °C	150 °C	10 V		3.5 V	20 V		2780 pF		127 nC
Infineon Technologies IPI65R420CFDXKSA1	MOSFET (Metal Oxide)			650 V	Through Hole	8.7 A	N-Channel	I2PAK TO-262-3 Long Leads TO-262AA	420 mOhm	-55 °C	150 °C	10 V		4.5 V	20 V	PG-TO262-3	870 pF	83.3 W	32 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

IPI65R Series

N-Channel 650 V 7.3A (Tc) 63W (Tc) Through Hole PG-TO262-3

Documents

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