MOSFET N-CH 650V 13.8A TO262-3
| Part | Technology | Gate Charge (Qg) (Max) @ Vgs [Max] | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Mounting Type | Current - Continuous Drain (Id) @ 25°C | FET Type | Package / Case | Rds On (Max) @ Id, Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Vgs(th) (Max) @ Id | Vgs (Max) | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) [Max] | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | MOSFET (Metal Oxide) | 45 nC | 104 W | 650 V | Through Hole | 13.8 A | N-Channel | I2PAK TO-262-3 Long Leads TO-262AA | 280 mOhm | -55 °C | 150 °C | 10 V | 950 pF | 3.5 V | 20 V | ||||
Infineon Technologies | MOSFET (Metal Oxide) | 118 nC | 650 V | Through Hole | 31.2 A | N-Channel | I2PAK TO-262-3 Long Leads TO-262AA | 110 mOhm | -55 °C | 150 °C | 10 V | 4.5 V | 20 V | PG-TO262-3 | 3240 pF | 277.8 W | |||
Infineon Technologies | MOSFET (Metal Oxide) | 22 nC | 650 V | Through Hole | 6 A | N-Channel | I2PAK TO-262-3 Long Leads TO-262AA | 660 mOhm | -55 °C | 150 °C | 10 V | 4.5 V | 20 V | PG-TO262-3 | 615 pF | 62.5 W | |||
Infineon Technologies | MOSFET (Metal Oxide) | 41 nC | 650 V | Through Hole | 11.4 A | N-Channel | I2PAK TO-262-3 Long Leads TO-262AA | 310 mOhm | -55 °C | 150 °C | 10 V | 4.5 V | 20 V | PG-TO262-3 | 104.2 W | ||||
Infineon Technologies | MOSFET (Metal Oxide) | 45 nC | 104 W | 650 V | Through Hole | 13.8 A | N-Channel | I2PAK TO-262-3 Long Leads TO-262AA | 280 mOhm | -55 °C | 150 °C | 10 V | 950 pF | 3.5 V | 20 V | PG-TO262-3 | |||
Infineon Technologies | MOSFET (Metal Oxide) | 63 W | 650 V | Through Hole | 7.3 A | N-Channel | I2PAK TO-262-3 Long Leads TO-262AA | 600 mOhm | -55 °C | 150 °C | 10 V | 3.5 V | 20 V | PG-TO262-3 | 440 pF | 23 nC | |||
Infineon Technologies | MOSFET (Metal Oxide) | 278 W | 650 V | Through Hole | 38 A | N-Channel | I2PAK TO-262-3 Long Leads TO-262AA | 99 mOhm | -55 °C | 150 °C | 10 V | 3.5 V | 20 V | 2780 pF | 127 nC | ||||
Infineon Technologies | MOSFET (Metal Oxide) | 650 V | Through Hole | 8.7 A | N-Channel | I2PAK TO-262-3 Long Leads TO-262AA | 420 mOhm | -55 °C | 150 °C | 10 V | 4.5 V | 20 V | PG-TO262-3 | 870 pF | 83.3 W | 32 nC |