APTM50AM19STG

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Microsemi Corporation

MOSFET 2N-CH 500V 170A SP4

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Unknown

Microsemi Corporation

MOSFET 2N-CH 500V 170A SP4

Technical Specifications

Parameters and characteristics for this part

Specification	APTM50AM19STG

Configuration	2 N-Channel (Half Bridge)
Current - Continuous Drain (Id) @ 25°C	170 A
Drain to Source Voltage (Vdss)	500 V
Gate Charge (Qg) (Max) @ Vgs	492 nC
Input Capacitance (Ciss) (Max) @ Vds	22400 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	SP4
Power - Max [Max]	1250 W
Supplier Device Package	SP4
Technology	Silicon Carbide (SiC)
Vgs(th) (Max) @ Id	5 V

Part	Vgs(th) (Max) @ Id	Supplier Device Package	Configuration	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Max]	Operating Temperature [Min]	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Power - Max [Max]	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs [Max]	Vgs(th) (Max) @ Id [Max]
Microsemi Corporation APTM50TDUM65PG	5 V	SP6-P	6 N-Channel (3-Phase Bridge)	Chassis Mount	7000 pF	MOSFET (Metal Oxide)	500 V	51 A	150 °C	-40 °C	140 nC	78 mOhm	390 W	SP6
Microsemi Corporation APTM50DHM35G		SP6	2 N-Channel (Dual) Asymmetrical	Chassis Mount		MOSFET (Metal Oxide)	500 V	99 A	150 °C	-40 °C	280 nC		781 W	SP6	14000 pF	39 mOhm	5 V
Microsemi Corporation APTM50DHM65T3G	5 V	SP3	2 N-Channel (Dual) Asymmetrical	Chassis Mount		MOSFET (Metal Oxide)	500 V	51 A	150 °C	-40 °C	340 nC	78 mOhm	390 W	SP3	10800 pF
Microsemi Corporation APTM50AM19STG	5 V	SP4	2 N-Channel (Half Bridge)	Chassis Mount		Silicon Carbide (SiC)	500 V	170 A	150 °C	-40 °C	492 nC		1250 W	SP4	22400 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 500V 170A 1250W Chassis Mount SP4

Technical documentation and resources