MOSFET 6N-CH 500V 51A SP6-P
| Part | Vgs(th) (Max) @ Id | Supplier Device Package | Configuration | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds [Max] | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Max] | Operating Temperature [Min] | Gate Charge (Qg) (Max) @ Vgs | Rds On (Max) @ Id, Vgs | Power - Max [Max] | Package / Case | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs [Max] | Vgs(th) (Max) @ Id [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microsemi Corporation | 5 V | SP6-P | 6 N-Channel (3-Phase Bridge) | Chassis Mount | 7000 pF | MOSFET (Metal Oxide) | 500 V | 51 A | 150 °C | -40 °C | 140 nC | 78 mOhm | 390 W | SP6 | |||
Microsemi Corporation | SP6 | 2 N-Channel (Dual) Asymmetrical | Chassis Mount | MOSFET (Metal Oxide) | 500 V | 99 A | 150 °C | -40 °C | 280 nC | 781 W | SP6 | 14000 pF | 39 mOhm | 5 V | |||
Microsemi Corporation | 5 V | SP3 | 2 N-Channel (Dual) Asymmetrical | Chassis Mount | MOSFET (Metal Oxide) | 500 V | 51 A | 150 °C | -40 °C | 340 nC | 78 mOhm | 390 W | SP3 | 10800 pF | |||
Microsemi Corporation | 5 V | SP4 | 2 N-Channel (Half Bridge) | Chassis Mount | Silicon Carbide (SiC) | 500 V | 170 A | 150 °C | -40 °C | 492 nC | 1250 W | SP4 | 22400 pF |