SSM6P47NU,LF

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Toshiba Semiconductor and Storage

MOSFET 2P-CH 20V 4A 6DFN

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Toshiba Semiconductor and Storage

MOSFET 2P-CH 20V 4A 6DFN

Technical Specifications

Parameters and characteristics for this part

Specification	SSM6P47NU,LF

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	4.6 nC
Input Capacitance (Ciss) (Max) @ Vds	290 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Power - Max [Max]	1 W
Rds On (Max) @ Id, Vgs	95 mOhm
Supplier Device Package	6-µDFN (2x2)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

Part	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Configuration	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Technology	Operating Temperature	Mounting Type	Power - Max [Max]	FET Feature
Toshiba Semiconductor and Storage SSM6P47NU,LF	4 A	1 V	95 mOhm	290 pF	20 V	2 P-Channel	4.6 nC	6-µDFN (2x2)	MOSFET (Metal Oxide)	150 °C	Surface Mount	1 W	Logic Level Gate

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General part information

Mosfet Array 20V 4A 1W Surface Mount 6-µDFN (2x2)

Technical documentation and resources