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MOSFET 2P-CH 20V 4A 6DFN
| Part | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Configuration | Gate Charge (Qg) (Max) @ Vgs | Supplier Device Package | Technology | Operating Temperature | Mounting Type | Power - Max [Max] | FET Feature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 4 A | 1 V | 95 mOhm | 290 pF | 20 V | 2 P-Channel | 4.6 nC | 6-µDFN (2x2) | MOSFET (Metal Oxide) | 150 °C | Surface Mount | 1 W | Logic Level Gate |