IXFK80N20Q

Obsolete

IXYS

MOSFET N-CH 200V 80A TO264AA

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Obsolete

IXYS

MOSFET N-CH 200V 80A TO264AA

Technical Specifications

Parameters and characteristics for this part

Specification	IXFK80N20Q

Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	180 nC
Input Capacitance (Ciss) (Max) @ Vds	4600 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-264AA, TO-264-3
Power Dissipation (Max)	360 W
Rds On (Max) @ Id, Vgs	28 mOhm
Supplier Device Package	TO-264AA (IXFK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	4 V

Part	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Mounting Type	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Power Dissipation (Max)	Vgs(th) (Max) @ Id [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id
IXYS IXFK80N20	TO-264AA (IXFK)	5900 pF	N-Channel	280 nC	200 V	30 mOhm	Through Hole	TO-264-3 TO-264AA	10 V	20 V	360 W	4 V	-55 °C	150 °C	MOSFET (Metal Oxide)
IXYS IXFK80N50Q3	TO-264AA (IXFK)	10000 pF	N-Channel		500 V	65 mOhm	Through Hole	TO-264-3 TO-264AA	10 V	30 V	1250 W		-55 °C	150 °C	MOSFET (Metal Oxide)	200 nC	6.5 V
IXYS IXFK80N20Q	TO-264AA (IXFK)	4600 pF	N-Channel		200 V	28 mOhm	Through Hole	TO-264-3 TO-264AA	10 V	20 V	360 W	4 V	-55 °C	150 °C	MOSFET (Metal Oxide)	180 nC
IXYS IXFK80N10Q

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 200 V 80A (Tc) 360W (Tc) Through Hole TO-264AA (IXFK)

Technical documentation and resources