MOSFET N-CH 200V 80A TO264AA
| Part | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | FET Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Mounting Type | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | Vgs(th) (Max) @ Id [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Technology | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXYS | TO-264AA (IXFK) | 5900 pF | N-Channel | 280 nC | 200 V | 30 mOhm | Through Hole | TO-264-3 TO-264AA | 10 V | 20 V | 360 W | 4 V | -55 °C | 150 °C | MOSFET (Metal Oxide) | ||
IXYS | TO-264AA (IXFK) | 10000 pF | N-Channel | 500 V | 65 mOhm | Through Hole | TO-264-3 TO-264AA | 10 V | 30 V | 1250 W | -55 °C | 150 °C | MOSFET (Metal Oxide) | 200 nC | 6.5 V | ||
IXYS | TO-264AA (IXFK) | 4600 pF | N-Channel | 200 V | 28 mOhm | Through Hole | TO-264-3 TO-264AA | 10 V | 20 V | 360 W | 4 V | -55 °C | 150 °C | MOSFET (Metal Oxide) | 180 nC | ||
IXYS |