SUM27N20-78-E3

Obsolete

Vishay General Semiconductor - Diodes Division

MOSFET N-CH 200V 27A TO263

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Obsolete

Vishay General Semiconductor - Diodes Division

MOSFET N-CH 200V 27A TO263

Technical Specifications

Parameters and characteristics for this part

Specification	SUM27N20-78-E3

Current - Continuous Drain (Id) @ 25°C	27 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	60 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	3.75 W, 150 W
Rds On (Max) @ Id, Vgs	78 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	FET Type	Technology	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Supplier Device Package	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
Vishay General Semiconductor - Diodes Division SUM27N20-78-E3	60 nC	Surface Mount	N-Channel	MOSFET (Metal Oxide)	78 mOhm	4 V	TO-263 (D2PAK)	200 V	-55 °C	175 ░C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	3.75 W 150 W	27 A	6 V 10 V	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 200 V 27A (Tc) 3.75W (Ta), 150W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources

No documents available