MOSFET N-CH 200V 27A TO263
| Part | Gate Charge (Qg) (Max) @ Vgs [Max] | Mounting Type | FET Type | Technology | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Supplier Device Package | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | 
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division  | 60 nC  | Surface Mount  | N-Channel  | MOSFET (Metal Oxide)  | 78 mOhm  | 4 V  | TO-263 (D2PAK)  | 200 V  | -55 °C  | 175 ░C  | D2PAK (2 Leads + Tab)  TO-263-3  TO-263AB  | 3.75 W  150 W  | 27 A  | 6 V  10 V  | 20 V  |