CNY65BEXI

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Vishay General Semiconductor - Diodes Division

OPTOISOLATOR 8200V TRANS 4DIP

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Vishay General Semiconductor - Diodes Division

OPTOISOLATOR 8200V TRANS 4DIP

Technical Specifications

Parameters and characteristics for this part

Specification	CNY65BEXI

Current - Output / Channel	50 mA
Current Transfer Ratio (Max)	200 %
Current Transfer Ratio (Min) [Min]	100 %
Input Type	DC
Mounting Type	Through Hole
Number of Channels	1
Operating Temperature [Max]	100 °C
Operating Temperature [Min]	-55 °C
Output Type	1.81 mOhm
Package / Case	4-DIP (0.300", 7.62mm)
Rise / Fall Time (Typ) [custom]	2.4 µs
Rise / Fall Time (Typ) [custom]	2.4 µs
Supplier Device Package	4-DIP
Turn On / Turn Off Time (Typ) [custom]	3 µs
Turn On / Turn Off Time (Typ) [custom]	5 µs
Vce Saturation (Max) [Max]	300 mV
Voltage - Forward (Vf) (Typ)	1.25 V
Voltage - Isolation	8200 Vrms
Voltage - Output (Max) [Max]	32 V

Part	Voltage - Forward (Vf) (Typ)	Current Transfer Ratio (Min) [Min]	Supplier Device Package	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Voltage - Output (Max) [Max]	Input Type	Number of Channels	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Current Transfer Ratio (Max)	Package / Case	Turn On / Turn Off Time (Typ) [custom]	Turn On / Turn Off Time (Typ) [custom]	Current - Output / Channel	Vce Saturation (Max) [Max]	Voltage - Isolation	Output Type
Vishay General Semiconductor - Diodes Division CNY65AGRST	1.32 V	100 %	4-SMD	2.7 µs	2.4 µs	32 V	DC	1	85 °C	-55 °C	Surface Mount	300 %	4-SMD Gull Wing	3 µs	5 µs	50 mA	300 mV	8200 Vrms	1.81 mOhm
Vishay General Semiconductor - Diodes Division CNY65ST	1.32 V	50 %	4-SMD	2.7 µs	2.4 µs	32 V	DC	1	85 °C	-55 °C	Surface Mount	300 %	4-SMD Gull Wing	3 µs	5 µs	50 mA	300 mV	8200 Vrms	1.81 mOhm
Vishay General Semiconductor - Diodes Division CNY65B	1.25 V	100 %	4-DIP	2.7 µs	2.4 µs	32 V	DC	1	85 °C	-55 °C	Through Hole	200 %	4-EDIP (0.300" 7.62mm)	3 µs	5 µs	50 mA	300 mV	8200 Vrms	1.81 mOhm
Vishay General Semiconductor - Diodes Division CNY65BEXI	1.25 V	100 %	4-DIP	2.4 µs	2.4 µs	32 V	DC	1	100 °C	-55 °C	Through Hole	200 %	4-DIP (0.300" 7.62mm)	3 µs	5 µs	50 mA	300 mV	8200 Vrms	1.81 mOhm
Vishay General Semiconductor - Diodes Division CNY65AYST	1.32 V	50 %	4-SMD	2.7 µs	2.4 µs	32 V	DC	1	85 °C	-55 °C	Surface Mount	150 %	4-SMD Gull Wing	3 µs	5 µs	50 mA	300 mV	8200 Vrms	1.81 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1050	$ 3.09

General part information

Optoisolator Transistor Output 8200Vrms 1 Channel 4-DIP

Technical documentation and resources